AT45DB642D-CNU DATASHEET PDF

The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety . CNU = 8-lead, 6 x 8 mm CASON. T = lead. AT45DBD-CNU datasheet, AT45DBD-CNU circuit, AT45DBD-CNU data sheet: ATMEL – megabit volt Dual-interface DataFlash,alldatasheet, . AT45DBD-CNU – Flash Memory, Serial NOR, 64 Mbit, Pages x. Add to compare. Image is for Technical Datasheet: AT45DBD-CNU Datasheet.

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Main Memory Page Program through Buffer 1 or 2 Use Block Erase opcode 50H alternative. The Block Erase function is not affected by the Chip Erase issue.

To enable the sector protection using the The algorithm above shows the programming of a single page. To perform a contin- uous read with the page size set to bytes, the opcode, 03H, must be clocked into the device followed by three address bytes A22 – A The algorithm will be repeated sequentially for each page within the entire array. Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector.

Elcodis is a trademark of Elcodis Company Ltd. The shipping carrier option is not marked on the devices.

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Since the entire memory array erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored The user is able to configure these parts to a byte page size if desired. For Atmel and some other manufacturersthe Manufacturer ID data is comprised of only one byte.

Master clocks in BYTE a. Standard parts are shipped with the page size set to bytes. Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full at45dbb642d-cnu cycle must be used to at45db642d-ccnu data back and forth across the serial bus. Fixed tim- ing is not recommended.

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AT45DBD-CNU | ATMEL | DATASHEET | PHOTO

Manufacturer ID codes that at45db42d-cnu two, three or even four bytes long with the first byte s in the sequence being 7FH. AC Waveforms Six different timing waveforms are shown below. Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely.

Therefore, the contents of the buffer will be altered from its previous state when this command is issued. Parts ordered with suffix At45bd642d-cnu are shipped in bulk with the page size set to bytes.

AT45DBDCNU Suppliers

datasheey The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register. To allow for af45db642d-cnu in-system reprogrammability, the AT45DBD does not require high input voltages for programming. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation.

Page 21 Figure Unless otherwise specified tolerance: Parts will have a or SL marked on them To perform a buffer to main memory page program with built-in erase for the Page 53 Packaging Information Page 35 Table The DataFlash is designed to The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed.

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Main Memory Page to Buffer 1 or 2 Compare 7. Page 13 Software Sector Protection 8. Auto Page Rewrite Group C commands consist of: Deep Power-down, the device will return to the normal standby mode. Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, at45db6422d-cnu full clock cycle must be used to transmit data back and forth across the serial bus.

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The first 13 bits PA12 – PA0 of the bit address sequence specify which page of the main memory array to read, and the dattasheet 11 bits BA10 – BA0 of the bit address sequence specify the starting byte address within the page. For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices VCSL Changed t from max.

Command Resume from Deep Power-down Figure Copy your embed code and put on your site: The device density is indicated using bits and 2 of the status dxtasheet. Sector Lockdown com- mand if necessary. Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes.

All program operations to the DataFlash occur on a page by page basis Main Memory Page to Buffer 1 or 2 Transfer 6.